PART |
Description |
Maker |
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
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HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered 1M x 64 Bit DRAM Module unbuffered From old datasheet system 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM 4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc. Alliance Semiconductor
|
AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM(江户)
|
Alliance Semiconductor, Corp.
|
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 16M x 72-Bit EDO-DRAM Module (ECC - Module) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|